InGaAs/InP SPADs for near-infrared applications: device operating conditions and dedicated electronics

Alberto Tosi; Alberto Dalla Mora; Simone Tisa; Fabio Acerbi; Franco Zappa; Sergio Cova

doi:10.1117/12.850696

28 April 2010 InGaAs/InP SPADs for near-infrared applications: device operating conditions and dedicated electronics

Alberto Tosi, Alberto Dalla Mora, Simone Tisa, Fabio Acerbi, Franco Zappa, Sergio Cova

Proceedings Volume 7681, Advanced Photon Counting Techniques IV; 76810R (2010) https://doi.org/10.1117/12.850696
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have recently shown good performances in terms of dark count rate and detection efficiency, making them suitable for many NIR single-photon counting applications. However, it is mandatory to operate InGaAs/InP SPADs in optimized working conditions and in association with proper dedicated electronics. A complete characterization of primary dark count rate, afterpulsing, detection efficiency and timing jitter is required in order to be able to tailor the working conditions to the specific request. Moreover, very fast quenching circuits can efficiently minimize afterpulsing, while low-jitter front-end circuits detect the avalanche pulse with high timing precision.

Citation Download Citation

Alberto Tosi, Alberto Dalla Mora, Simone Tisa, Fabio Acerbi, Franco Zappa, and Sergio Cova "InGaAs/InP SPADs for near-infrared applications: device operating conditions and dedicated electronics", Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810R (28 April 2010); https://doi.org/10.1117/12.850696

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