Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors

Hao Yin; Yongfu Li; Wenjuan Wang; Hui Xia; Xue Li; Haimei Gong; Wei Lu

doi:10.1117/12.867899

22 October 2010 Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors

Hao Yin, Yongfu Li, Wenjuan Wang, Hui Xia, Xue Li, Haimei Gong, Wei Lu

Author Affiliations +

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76582O (2010) https://doi.org/10.1117/12.867899
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

The p-n junctions in planar detectors are usually formed by diffusion of p-type impurity, and the effect of diffusion is crucial for device performance. This work reports the investigation of cross-sectional scanning capacitance microscopy (SCM) on the p-type diffusion in device structures of planar InGaAs/InP infrared detectors. Compare to other methods, SCM can provide 2-dimensional carrier distribution mapping with nanometer resolution, thus it meets the requirement of the measurement on micrometer sized photosensitive elements. This work covers two types of InGaAs/InP device structures: i.e. the avalanche photodiodes (APD) and the PIN near-infrared detectors. For APD structures, we obtain the 2-dimensional carrier distribution and vertical p-type depth under 3 diffusion conditions. For PIN near-infrared detectors, the SCM image provides the diffused p-n junction both on the vertical and lateral direction. A stronger lateral diffusion around the InGaAs/InP heterojunction is observed, which indicates the influence of InGaAs/InP boundary on the vertical diffusion. And the junction region can be detected distinctly from the SCM profile, exhibiting the nanometer scale resolution. Finally, the ratio of lateral to vertical Zn diffusion distance in InP is acquired as 0.67. Our results demonstrate the distinctive capability of SCM investigation on semiconductor optoelectronic device structures.

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Hao Yin, Yongfu Li, Wenjuan Wang, Hui Xia, Xue Li, Haimei Gong, and Wei Lu "Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76582O (22 October 2010); https://doi.org/10.1117/12.867899

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KEYWORDS

Diffusion

Particle filters

Sensors

Zinc

Avalanche photodetectors

Capacitance

Infrared detectors

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