High crystalline GaN nanoparticle and GaN thin film fabrication

Yi Chen; K. S. Kang; J. Nayak; Jaehwan Kim

doi:10.1117/12.847484

30 March 2010 High crystalline GaN nanoparticle and GaN thin film fabrication

Yi Chen, K. S. Kang, J. Nayak, Jaehwan Kim

Proceedings Volume 7646, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2010; 76461J (2010) https://doi.org/10.1117/12.847484
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2010, San Diego, California, United States

Abstract

Single-phase hexangonal wurtzite GaN nanoparticles and GaN thin film were prepared by the sol-gel techniqiue.using Ga(NO₃)₃. For GaN thin films, Ga(NO₃)₃ was hydrolyzed with ethanol and acetic acid and aged for one day. GaO(OH) thin layer was fabricated with spin-coating and heating at 200 °C. For GaN nanoparticles, the Ga(NO₃)₃ was dissolved in concentrated nitric acid and adjusted pH to 8.5 using NH4(OH). Citric acid was added to the Ga(NO₃)₃ solution and heated 80 °C for 2 h. The solution was heated at 400 °C for 4 h to obtain the Ga₂O₃ nanoparticles. The GaO(OH) and Ga2O3 were annealed in a tube furnace at 900 °C for 1 h with NH₃ gas flow. The thickness of GaN thin film was approximately 46 nm. The grain size of the GaN thin film after converting from GaO(OH) to GaN, which was obtained by atomic force microscope image, was approximately 25-35 nm. The diameter of the GaN nanoparticles is approximately 15 nm with lattice fringes of 2.7 Α. The crystall has hexagonal wurzite structure, which is conformed by X-ray diffraction (XRD) pattern.

Citation Download Citation

Yi Chen, K. S. Kang, J. Nayak, and Jaehwan Kim "High crystalline GaN nanoparticle and GaN thin film fabrication", Proc. SPIE 7646, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2010, 76461J (30 March 2010); https://doi.org/10.1117/12.847484

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KEYWORDS

Gallium nitride

Nanoparticles

Thin films

Crystals

Particles

Silicon

Annealing

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