OMOG mask topography effect on lithography modeling of 32nm contact hole patterning

Lei Yuan; Wenzhan Zhou; Larry L. Zhuang; Kwang Sub Yoon; Qun Ying Lin; Scott Mansfield

doi:10.1117/12.846547

3 March 2010 OMOG mask topography effect on lithography modeling of 32nm contact hole patterning

Lei Yuan, Wenzhan Zhou, Larry L. Zhuang, Kwang Sub Yoon, Qun Ying Lin, Scott Mansfield

Proceedings Volume 7640, Optical Microlithography XXIII; 76402K (2010) https://doi.org/10.1117/12.846547
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

The topography effect of Opaque MoSi on Glass (OMOG) mask on 32nm contact hole patterning is analyzed by examining the difference of image intensity profile between thin mask approximation and rigorous electro-magnetic field (EMF) simulation. The study shows that OMOG topography results in more than a 20% decrease of image intensity. The impact of OMOG mask topography on lithography modeling of a 32nm contact hole process is explored by fitting lithography simulation with experimental results for both thin mask model and EMF model. This study shows that thin mask modeling is a good approximation of EMF modeling for a contact pitch larger than 120nm, but yields about 10nm prediction error for a 110nm contact pitch. Thin mask modeling is shown to be inaccurate in predicting critical dimension of contact arrays with sub-resolution assistant feature (SRAF). In addition, thin mask modeling is too pessimistic in predicting SRAF printability. In contrast, EMF model shows good prediction of contact arrays with and without sub-resolution feature. A modified thin mask modeling technique utilizing an effective SRAF size is proposed and verified with experimental results.

Citation Download Citation

Lei Yuan, Wenzhan Zhou, Larry L. Zhuang, Kwang Sub Yoon, Qun Ying Lin, and Scott Mansfield "OMOG mask topography effect on lithography modeling of 32nm contact hole patterning", Proc. SPIE 7640, Optical Microlithography XXIII, 76402K (3 March 2010); https://doi.org/10.1117/12.846547

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available