Controlling 2D aspect ratio of elliptical contact level interconnects utilizing spin-on and reactive ion etch critical dimension shrink for the 22-nm node

Andrew Metz; Shannon Dunn; Dave Hetzer; Jason Cantone; Shinichiro Kawakami; Tom Winter; Karen Petrillo; Dave Horak; Susan Fan; Matthew Colburn

doi:10.1117/12.846625

25 March 2010 Controlling 2D aspect ratio of elliptical contact level interconnects utilizing spin-on and reactive ion etch critical dimension shrink for the 22-nm node

Andrew Metz, Shannon Dunn, Dave Hetzer, Jason Cantone, Shinichiro Kawakami, Tom Winter, Karen Petrillo, Dave Horak, Susan Fan, Matthew Colburn

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Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76392Z (2010) https://doi.org/10.1117/12.846625
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Litho-Etch-Litho-Etch double patterning requires aggressive shrink of each sub-pattern's critical dimensions to enable inter-digitation and pitch doubling. Application of this double patterning technique to elliptical contacts introduces a new constraint to the CD shrink processes as controlling the 2-D aspect ratio of elliptical contacts is critical for both device performance and yield. The impact of a track-applied chemical shrink and reactive ion etch [RIE] shrink processes to pre/post RIE 2-D aspect ratios [2-D AR] have been evaluated. A methodology for controlling 2-D aspect ratios with an aggressive CD shrink target is described using a 2:1 aspect ratio test pattern resulting in the successful fabrication of 2:1 aspect ratio bottom CD contacts with 65% bias from the lithographic CD.

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Andrew Metz, Shannon Dunn, Dave Hetzer, Jason Cantone, Shinichiro Kawakami, Tom Winter, Karen Petrillo, Dave Horak, Susan Fan, and Matthew Colburn "Controlling 2D aspect ratio of elliptical contact level interconnects utilizing spin-on and reactive ion etch critical dimension shrink for the 22-nm node", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392Z (25 March 2010); https://doi.org/10.1117/12.846625

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KEYWORDS

Reactive ion etching

Critical dimension metrology

Etching

Chemical reactions

Lithography

Cadmium

Ions

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