Changes in vertical PAG distribution inside photoresist due to the variation of concentration

Jae Hyun Kim; Sung Il Ahn; Jin Goo Yoon; Youngho Kim; Seung-Ki Chae; Wang-Cheol Zin

doi:10.1117/12.858362

30 March 2010 Changes in vertical PAG distribution inside photoresist due to the variation of concentration

Jae Hyun Kim, Sung Il Ahn, Jin Goo Yoon, Youngho Kim, Seung-Ki Chae, Wang-Cheol Zin

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76391P (2010) https://doi.org/10.1117/12.858362
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Vertical distribution of photo acid generator (PAG) inside CA-type photoresist is inferred from X-ray reflectivity (XRR) analysis which gives the information on the vertical electron density profile of thin film. The difference between the density distribution of normal photoresist and pure resin indicates the approximate distribution of PAG. The electron density profile of each film is obtained by fitting method for the XRR results based on distorted wave Born approximation (DWBA) approach. In this study, trends in density distributions varied by concentration of PAG suggest that the inhomogeneous distributions of PAG near the surface or interface of photoresist film occurs due to interactions between PAG molecules and substrate, or polymer resin. Distributions with low concentration of PAG (2 wt%) show that the PAG molecules tend to be concentrated near the surface of photoresist, while over-load of PAG (20 wt%) results in the density increase near the interface region.

Citation Download Citation

Jae Hyun Kim, Sung Il Ahn, Jin Goo Yoon, Youngho Kim, Seung-Ki Chae, and Wang-Cheol Zin "Changes in vertical PAG distribution inside photoresist due to the variation of concentration", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391P (30 March 2010); https://doi.org/10.1117/12.858362

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