Improvement of the process overlay control for sub-40-nm DRAM

Sarohan Park; Eun-Ha Lee; Eun-Kyoung Shin; Yoon-Jung Ryu; Hye-Jin Shin; Seung-Hyun Hwang; Hee-Youl Lim; Kyu-Tae Sun; Tae-Seung Eom; Noh-Jung Kwak; Sung-Ki Park

doi:10.1117/12.846489

1 April 2010 Improvement of the process overlay control for sub-40-nm DRAM

Sarohan Park, Eun-Ha Lee, Eun-Kyoung Shin, Yoon-Jung Ryu, Hye-Jin Shin, Seung-Hyun Hwang, Hee-Youl Lim, Kyu-Tae Sun, Tae-Seung Eom, Noh-Jung Kwak, Sung-Ki Park

Author Affiliations +

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76382H (2010) https://doi.org/10.1117/12.846489
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In recent years, DRAM technology node has shrunk below to 40nm HP (Half Pitch) patterning with significant progresses of hyper NA (Numerical Aperture) immersion lithography system and process development. Especially, the development of DPT (Double Patterning Technology) and SPT (Spacer Patterning Technology) can extend the resolution limit of lithography to sub 30nm HP patterning. However it is also necessary to improve the tighter overlay control for developing the sub 40nm DRAM because of small device overlap margin. Since new process technologies such as complex structure of DPT and SPT, new hard mask material and extreme CMP (Chemical Mechanical Planarization) process have also applied as design rule is decreased, the improvement of process overlay control is very important. In this paper, we have studied that the characterization of overlay performance for sub 40nm DRAM with actual experimental data. First, we have investigated the influence on the intra field overlay and inter field overlay with comparison of HOWA and HOPC and the improvement of inter field overlay residual errors. Then we have studied the process effects such as hard mask material, thermal process and CMP process that affect to overlay control.

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Sarohan Park, Eun-Ha Lee, Eun-Kyoung Shin, Yoon-Jung Ryu, Hye-Jin Shin, Seung-Hyun Hwang, Hee-Youl Lim, Kyu-Tae Sun, Tae-Seung Eom, Noh-Jung Kwak, and Sung-Ki Park "Improvement of the process overlay control for sub-40-nm DRAM", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382H (1 April 2010); https://doi.org/10.1117/12.846489

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KEYWORDS

Semiconducting wafers

Overlay metrology

Chemical mechanical planarization

Process control

Distortion

Photomasks

Optical alignment

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