Challenges of EUVL resist process toward practical application

Shinichi Ito; Yukiko Kikuchi; Daisuke Kawamura; Eishi Shiobara; Keiichi Tanaka; Hitoshi Kosugi; Junichi Kitano; Takayuki Toshima

doi:10.1117/12.846260

22 March 2010 Challenges of EUVL resist process toward practical application

Shinichi Ito, Yukiko Kikuchi, Daisuke Kawamura, Eishi Shiobara, Keiichi Tanaka, Hitoshi Kosugi, Junichi Kitano, Takayuki Toshima

Author Affiliations +

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76362V (2010) https://doi.org/10.1117/12.846260
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

This paper reports the extracted risk issues on practical EUV resist processes and discusses verifications of them. The risk issues were extracted with emphasis on critical dimension, defectivity and productivity for mass production EUV resist processes. The authors verified these risk factors by utilizing available empirical knowledge. The authors found that the micro loading effect of by-product in the resist development process was a key factor for CD uniformity. Also discovered, was that high surface energy differences on the patterned wafers were a key factor for defectivity. As a result, application of scan-dynamic development and dynamic scan rinse to EUV processes on a mass production level will contribute greatly to CD and defect control as well as productivity.

Citation Download Citation

Shinichi Ito, Yukiko Kikuchi, Daisuke Kawamura, Eishi Shiobara, Keiichi Tanaka, Hitoshi Kosugi, Junichi Kitano, and Takayuki Toshima "Challenges of EUVL resist process toward practical application", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362V (22 March 2010); https://doi.org/10.1117/12.846260

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KEYWORDS

Extreme ultraviolet lithography

Critical dimension metrology

Photoresist processing

Semiconducting wafers

Extreme ultraviolet

Surface plasmons

Photomasks

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