Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

U. K. Klostermann; T. Mülders; T. Schmöller; G. F. Lorusso; E. Hendrickx

doi:10.1117/12.846549

20 March 2010 Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

U. K. Klostermann, T. Mülders, T. Schmöller, G. F. Lorusso, E. Hendrickx

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 763619 (2010) https://doi.org/10.1117/12.846549
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In this paper, we discuss the performance of EUV resist models in terms of predictive accuracy, and we assess the readiness of the corresponding model calibration methodology. The study is done on an extensive OPC data set collected at IMEC for the ShinEtsu resist SEVR-59 on the ASML EUV Alpha Demo Tool (ADT), with the data set including more than thousand CD values. We address practical aspects such as the speed of calibration and selection of calibration patterns. The model is calibrated on 12 process window data series varying in pattern width (32, 36, 40 nm), orientation (H, V) and pitch (dense, isolated). The minimum measured feature size at nominal process condition is a 32 nm CD at a dense pitch of 64 nm. Mask metrology is applied to verify and eventually correct nominal width of the drawn CD. Cross-sectional SEM information is included in the calibration to tune the simulated resist loss and sidewall angle. The achieved calibration RMS is ~ 1.0 nm. We show what elements are important to obtain a well calibrated model. We discuss the impact of 3D mask effects on the Bossung tilt. We demonstrate that a correct representation of the flare level during the calibration is important to achieve a high predictability at various flare conditions. Although the model calibration is performed on a limited subset of the measurement data (one dimensional structures only), its accuracy is validated based on a large number of OPC patterns (at nominal dose and focus conditions) not included in the calibration; validation RMS results as small as 1 nm can be reached. Furthermore, we study the model's extendibility to two-dimensional end of line (EOL) structures. Finally, we correlate the experimentally observed fingerprint of the CD uniformity to a model, where EUV tool specific signatures are taken into account.

Citation Download Citation

U. K. Klostermann, T. Mülders, T. Schmöller, G. F. Lorusso, and E. Hendrickx "Physical resist models and their calibration: their readiness for accurate EUV lithography simulation", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763619 (20 March 2010); https://doi.org/10.1117/12.846549

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