High data rate 850-nm oxide VCSEL for 20 Gbit/s application and beyond

Chen Ji; Jingyi Wang; David Söderström; Laura Giovane

doi:10.1117/12.853250

2 December 2009 High data rate 850-nm oxide VCSEL for 20 Gbit/s application and beyond

Chen Ji, Jingyi Wang, David Söderström, Laura Giovane

Proceedings Volume 7631, Optoelectronic Materials and Devices IV; 763119 (2009) https://doi.org/10.1117/12.853250
Event: Asia Communications and Photonics, 2009, Shanghai, Shanghai , China

Abstract

In this paper we report a 850nm oxide VCSEL operating at 20 Gbit/s (PRBS31) with a 5 dB Extinction Ratio, based on a volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We present detailed time and frequency domain VCSEL characterization results, and a finite element simulation showing good agreement with experimental data.

Citation Download Citation

Chen Ji, Jingyi Wang, David Söderström, and Laura Giovane "High data rate 850-nm oxide VCSEL for 20 Gbit/s application and beyond", Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 763119 (2 December 2009); https://doi.org/10.1117/12.853250

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available