Grating coupled enhancement of light emission from IR light emitting diode devices

Naresh C. Das; W. Change

doi:10.1117/12.847990

24 February 2010 Grating coupled enhancement of light emission from IR light emitting diode devices

Naresh C. Das, W. Change

Proceedings Volume 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV; 76171W (2010) https://doi.org/10.1117/12.847990
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We report here the electroluminescence in the range of 3-4.5 μm and 6-10 μm from Sb-based type II interband quantum cascade structure LED devices. We measured the light emission from the top surface of the device with different grating structures. We used different etch depths for the grating formation. The light-current-voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45 degree angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.

Citation Download Citation

Naresh C. Das and W. Change "Grating coupled enhancement of light emission from IR light emitting diode devices", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171W (24 February 2010); https://doi.org/10.1117/12.847990

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