Paper
12 February 2010 Dual-state lasing and the case against the phonon bottleneck
Peter Spencer, Jie Shi, Edmund Clarke, Ray Murray, Mohammad Majid, David Childs, Ryan Alexander, Kristian Groom, Richard Hogg
Author Affiliations +
Proceedings Volume 7616, Novel In-Plane Semiconductor Lasers IX; 761606 (2010) https://doi.org/10.1117/12.845632
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Quantum Dot lasers exhibit the novel phenomenon of dual state lasing where population inversion can be achieved on two optical transitions within the dots. In principle this might occur if a phonon bottleneck exists to impede relaxation of carriers from the higher energy state. Here we present an alternative explanation whereby different lasing modes compete for carriers and are spatially separable. Evidence comes from a comparison of electrical and optical measurements made on the devices. The evolution of a particular lasing mode depends on diffusion of carriers between dots and we show how, using an equivalent circuit model, this is consistent with our measurements.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Spencer, Jie Shi, Edmund Clarke, Ray Murray, Mohammad Majid, David Childs, Ryan Alexander, Kristian Groom, and Richard Hogg "Dual-state lasing and the case against the phonon bottleneck", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 761606 (12 February 2010); https://doi.org/10.1117/12.845632
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diodes

Laser damage threshold

Diffusion

Quantum wells

Semiconductor lasers

Circuit switching

Resistance

Back to Top