Carrier-induced optical index variations in InP waveguide diodes: the thermal effects contribution

N. Saadsaoud; M. Zegaoui; D. Decoster; E. Dogheche; J. Chazelas

doi:10.1117/12.845549

22 January 2010 Carrier-induced optical index variations in InP waveguide diodes: the thermal effects contribution

N. Saadsaoud, M. Zegaoui, D. Decoster, E. Dogheche, J. Chazelas

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 760811 (2010) https://doi.org/10.1117/12.845549
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Thermal-induced index variations are experimentally observed with Schottky diodes; they are opposite to the carrier induced ones, with an increase of optical index as high as 0.1, and a 1μs response time. It turns out that the thermal effect can be an important limiting factor to the optical index change. In this paper we evaluate each phenomenon separately (lifetime and thermal effects) and the influence of the thermal effects on the carrier induced index variations.

Citation Download Citation

N. Saadsaoud, M. Zegaoui, D. Decoster, E. Dogheche, and J. Chazelas "Carrier-induced optical index variations in InP waveguide diodes: the thermal effects contribution", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760811 (22 January 2010); https://doi.org/10.1117/12.845549

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