Structural and electrical properties of rectifying p-ZnO/n+-InP heterojunction

Arjun Mandal; Subhananda Chakrabarti

doi:10.1117/12.840525

15 February 2010 Structural and electrical properties of rectifying p-ZnO/n⁺-InP heterojunction

Arjun Mandal, Subhananda Chakrabarti

Proceedings Volume 7603, Oxide-based Materials and Devices; 76031P (2010) https://doi.org/10.1117/12.840525
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

ZnO thin films were deposited over n⁺ InP (100) substrates by Pulsed Laser Deposition (PLD) technique at 400°C temperature in an oxygen ambient of 75 mTorr followed by Rapid Thermal Annealing (RTA) at the temperatures 450°C, 550°C and 650°C respectively. XRD results revealed that the full width at half maxima (FWHM) of the annealed samples were narrower (0.1836°) compared to that of the as grown sample (0.3264°) for the c-axis oriented ZnO (002) films. A lower strain (~ -0.23%) and less biaxial compressive stress (~ -1.063 GPa) were observed for the annealed samples. AFM images depicted lowest surface roughness of 7.257 nm (root-mean-square) for the film annealed at 550°C. A high absorption coefficient of 28.12 μm^-1 was calculated around 380 nm wavelength from the UV/VIS spectroscopy in reflection mode for the as-grown sample. The optical band gap was calculated to be about 3.23 eV. p-type ZnO film, grown under same condition (annealed at 550°C) over semi insulating InP (100) substrates had a high hole concentration of 2.95X10¹⁹ cm^-3 and Hall mobility of 8.63 cm²/V-s at room temperature. Current Rectification Ratio (I_F/I_R) _|V|=1.5 of 17.2 was measured from the I-V characteristics of the p-ZnO/n⁺-InP heterojunction diode fabricated with the ZnO film annealed at 550°C.

Citation Download Citation

Arjun Mandal and Subhananda Chakrabarti "Structural and electrical properties of rectifying p-ZnO/n⁺-InP heterojunction", Proc. SPIE 7603, Oxide-based Materials and Devices, 76031P (15 February 2010); https://doi.org/10.1117/12.840525

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