A floating gate double quantum well far-infrared photoconductor

Elizabeth Ledwosinska; Thomas Szkopek

doi:10.1117/12.841198

4 March 2010 A floating gate double quantum well far-infrared photoconductor

Elizabeth Ledwosinska, Thomas Szkopek

Proceedings Volume 7601, Terahertz Technology and Applications III; 76010J (2010) https://doi.org/10.1117/12.841198
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

The design and characterization of a floating gate GaAs/AlGaAs double quantum well long-infrared photoconductor is reported, with record operating temperature and modulation bandwidth for a device of this type. The principle of device operation relies on the photoionization of one quantum well, which functions as a floating gate, to modulate the conductance of the underlying quantum well, which functions as a transistor channel. Photoionization under normal incidence illumination is facilitated by a metal grating. Responsivity of 80-160 A/W for 12-20 μm long-infrared radiation has been observed at a 10 K device temperature, and photoresponse is clearly discernable up to 30 K. The modulation bandwidth was measured to exceed 1 kHz. An NEP = 2×10^-11 W/ square root Hz, and D* = 4×10⁸ cm square root Hz/W were measured, as limited by quantum well conductance fluctuations. Device performance is in fair competition with conventional QWIPs and we also propose a method to increase input saturation power in a photodetector of this structure.

Citation Download Citation

Elizabeth Ledwosinska and Thomas Szkopek "A floating gate double quantum well far-infrared photoconductor", Proc. SPIE 7601, Terahertz Technology and Applications III, 76010J (4 March 2010); https://doi.org/10.1117/12.841198

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