Paper
23 September 2009 Introducing process variability score for process window OPC optimization
Author Affiliations +
Abstract
As the IC Industry moves towards 32nm technology node and below, it becomes important to study the impact of process window variations on yield. PVBands is a technique to express process parameter variations such as dose, focus, mask size, etc. However, PVBands width and area ratio alone are insufficient as a quantitative measure for judging the PVBand performance, as it does not take into consideration how far away the contours are from the target. In this paper, a novel mathematical formulation is developed to better judge the PVBands performance. It expresses the PVBand width and symmetry with respect to the target through a single score. This score can be used in OPC (Optical Proximity Correction) iterations instead of working with the nominal EPE (Edge Placement Error). Not only does this approach provide a better measure of the PVBands performance through the value of the score, but it also presents a straightforward method for PWOPC optimization by using the PV Score directly in the iterations.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Moutaz Fakhry, H. Maaty, and A. Seoud "Introducing process variability score for process window OPC optimization", Proc. SPIE 7488, Photomask Technology 2009, 748836 (23 September 2009); https://doi.org/10.1117/12.829714
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Optical proximity correction

Photovoltaics

Lead

Photomasks

Visualization

Current controlled current source

Electroluminescence

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