Sub-30-nm defect removal on EUV substrates

Abbas Rastegar; Sean Eichenlaub; Arun John Kadaksham; Matt House; Brian Cha; Henry Yun

doi:10.1117/12.835197

27 May 2009 Sub-30-nm defect removal on EUV substrates

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Matt House, Brian Cha, Henry Yun

Proceedings Volume 7470, 25th European Mask and Lithography Conference; 74700Z (2009) https://doi.org/10.1117/12.835197
Event: 25th European Mask and Lithography Conference, 2009, Dresden, Germany

Abstract

Naturally occurring sub 30 nm defects on quartz and Low Thermal Expansion Material (LTEM) substrates were characterized by using Atomic Force Microscope(AFM). Our data indicates that a majority of defects on the incoming substrate are hard defects including large, flat particles with a height less than 5 nm, tiny particles with a size of 10 nm to 30 nm SEVD and pits with a depth of about 9 nm. All the soft particles added by handling with sizes of >50 nm can be removed with a single cleaning process. At least four cleaning cycles are required to remove all of the remaining embedded particles. However, after particle removal in their initial location a shallow pit remains. Based on detailed characterization of defect and surface by AFM, we propose that these hard particles are added during the glass polishing step and therefore it is important to revisit the glass Chemical Mechanical Polishing (CMP) processes and optimize them for defect reduction. A qualitative value for particle removal efficiency (PRE) of >99% was obtained for 20 nm Poly Styrene Latex Sphere (PSL) deposited particles on surface of glass.

Citation Download Citation

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Matt House, Brian Cha, and Henry Yun "Sub-30-nm defect removal on EUV substrates", Proc. SPIE 7470, 25th European Mask and Lithography Conference, 74700Z (27 May 2009); https://doi.org/10.1117/12.835197

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