The novel plasma etching process for defect reduction in photomask fabrication

Ji-Hyun Lee; Il-Yong Jang; Yu Suk Jeong; Byounghoon Seung; Seong-Yong Moon; Sang-Gyun Woo; Han Ku Cho

doi:10.1117/12.824247

11 May 2009 The novel plasma etching process for defect reduction in photomask fabrication

Ji-Hyun Lee, Il-Yong Jang, Yu Suk Jeong, Byounghoon Seung, Seong-Yong Moon, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737906 (2009) https://doi.org/10.1117/12.824247
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan

Abstract

As the device design rule shrinks, photomask manufacturers need to have advanced defect controllability during the Cr and MoSi etch in the process of phase shift mask(PSM). In order to decrease the number of defects, which may be originated from the mechanical transferring, plasma ignition and cross-contamination of resist stripping or cleaning process, a novel plasma etching process was developed in a commercial photomask etcher. In this process named as the "In-situ. etching", Cr and Mosi is etched stepwise in a chamber. The In-situ. etching processes produce better defect level than that of the conventional process without deteriorating other mask quality such as CD performance, profile and process reproducibility. Particle generated by plasma ignition in in-situ. etching lead to defect which is an obstacle in Cr etch. Because plasma is stable from Cr etch to Mosi etch, no defect is added in Mosi etch. Furthermore quantitative analysis of by-products deposited and eroded by the chamber position shows that by-products are comprised of Al, chlorine, carbon. These byproducts can be removed by fluorine-containing plasma.

Citation Download Citation

Ji-Hyun Lee, Il-Yong Jang, Yu Suk Jeong, Byounghoon Seung, Seong-Yong Moon, Sang-Gyun Woo, and Han Ku Cho "The novel plasma etching process for defect reduction in photomask fabrication", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737906 (11 May 2009); https://doi.org/10.1117/12.824247

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