Performance and modeling of the MWIR HgCdTe electron avalanche photodiode

Jeffrey Beck; Richard Scritchfield; Billy Sullivan; Jamie Teherani; Chang-Feng Wan; Mike Kinch; Martha Ohlson; Mark Skokan; Lewis Wood; Pradip Mitra; Mike Goodwin; Jim Robinson

doi:10.1117/12.819045

6 May 2009 Performance and modeling of the MWIR HgCdTe electron avalanche photodiode

Jeffrey Beck, Richard Scritchfield, Billy Sullivan, Jamie Teherani, Chang-Feng Wan, Mike Kinch, Martha Ohlson, Mark Skokan, Lewis Wood, Pradip Mitra, Mike Goodwin, Jim Robinson

Author Affiliations +

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 729838 (2009) https://doi.org/10.1117/12.819045
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the to the collection region fill factor. A 2D diffusion model calculates the time dependent response and steady state pixel point spread function for cylindrical diodes, and predicts bandwidths near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low as 1000 counts per μs per cm2 at an APD gain of 444. A junction doping profile was determined from capacitance-voltage data. Spectral response data shows a gain independent characteristic.

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Jeffrey Beck, Richard Scritchfield, Billy Sullivan, Jamie Teherani, Chang-Feng Wan, Mike Kinch, Martha Ohlson, Mark Skokan, Lewis Wood, Pradip Mitra, Mike Goodwin, and Jim Robinson "Performance and modeling of the MWIR HgCdTe electron avalanche photodiode", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729838 (6 May 2009); https://doi.org/10.1117/12.819045

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KEYWORDS

Avalanche photodetectors

Diodes

Diffusion

Mid-IR

Point spread functions

Capacitance

Mercury cadmium telluride

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