Effects of annealing temperature on the performance of the Schottky diode fabricated with TiO2 sol-gel

Y. Chen; K. H. Yoo; K. S. Kang; Jaehwan Kim

doi:10.1117/12.815584

31 March 2009 Effects of annealing temperature on the performance of the Schottky diode fabricated with TiO₂ sol-gel

Y. Chen, K. H. Yoo, K. S. Kang, Jaehwan Kim

Proceedings Volume 7291, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2009; 72910Q (2009) https://doi.org/10.1117/12.815584
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2009, San Diego, California, United States

Abstract

Various conbinations of TiO₂ sol-gel were prepared to fabricate Schottky diodes. Pure TiO₂ sol-gel was spin-coated to the various substrates such as glass, silicon wafer, and cellulose. The sol-gel driven TiO₂ films were generated cracks all over the surface during the annealing process. To prevent cracks, polyethylene glycol (PEG) was added to TiO₂ sol-gel solution. TiO₂-PEG sol-gel was spin-coated to the substrate and heat treated at 100, 200, and 300°C for 1 h. The film thicknesses were 230, 190, and 129 nm for the sample heated at 100, 200, and 300°C, respectively, and no cracks were observed. The FTIR pesk at 3380 cm^-1 corresponds to -OH stretching mode and disappeared as the heating temperature increased. The characteristic peaks of PEG at 2875 and 1120 cm^-1 also disappeared as the heating temperature increased. The Schottky diodes comprised of Al/PEG-TiO₂/Au with various heat treatment were fabricated. The forward current was drastically increased as the annealing temperature increased. The plots of parabolic conduction curves based on Schottky conduction model, Poole-Frenkel conduction model, and space charge limitted conduction model show nonlinear relationship. These nonlinear relationship indicates that the conduction mechanism is not purely single conduction mechanism.

Citation Download Citation

Y. Chen, K. H. Yoo, K. S. Kang, and Jaehwan Kim "Effects of annealing temperature on the performance of the Schottky diode fabricated with TiO₂ sol-gel", Proc. SPIE 7291, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2009, 72910Q (31 March 2009); https://doi.org/10.1117/12.815584

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