Paper
19 February 2009 Ultrahigh speed uni-traveling-carrier photodiodes based on materials of short carrier lifetime
Jinlin Chen, Junqiang Sun
Author Affiliations +
Abstract
A novel uni-traveling-carrier photodiode based on materials of ultra-short carrier lifetime (ST-UTC-PD) is designed and numerically analyzed. The ST-UTC-PD solves the problem of high dark current of short carrier lifetime photoconductors, while takes advantage of the ultra-high speed response of short lifetime materials. By using ultra-short carrier lifetime materials for the absorption layer of UTC-PD, the limitation of speed by electron diffusion time is overcome, which yields ultrahigh speed response of ST-UTC-PD. The activities of electrons in the absorption layer are analyzed and the two deciding factors to the speed of ST-UTC-PD are discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinlin Chen and Junqiang Sun "Ultrahigh speed uni-traveling-carrier photodiodes based on materials of short carrier lifetime", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791R (19 February 2009); https://doi.org/10.1117/12.823341
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Absorption

Diffusion

Photodiodes

Photoresistors

Dielectric relaxation

Terahertz radiation

Optoelectronics

Back to Top