A terahertz detector operating at room temperature

X. H. Lu; L. Kang

doi:10.1117/12.821570

16 February 2009 A terahertz detector operating at room temperature

X. H. Lu, L. Kang

Proceedings Volume 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology; 72770N (2009) https://doi.org/10.1117/12.821570
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China

Abstract

A detector for terahertz(THz) operating at room temperature for detecting the THz signals is fabricated by using radio frequency (RF) magnetron sputtering and electronic beam lithography. This detector is composed of a planar logarithm periodic antenna of Al film and a microbolometer of Nb₅N₆ thin film, acting as both a radiation absorber and a temperature sensor, respectively which is fabricated on a high resistivity Si substrate with 100nm thick SiO₂ layer. The best attainable responsivity of this device is over 100 volts per watt at 300K at a bias current of 2 mA,and the electrical noise equivalent powers (NEP) is as low as 3.98×10^-10W•Hz^1/2.These are good enough for many detecting and imaging arrays in THz frequencies.

Citation Download Citation

X. H. Lu and L. Kang "A terahertz detector operating at room temperature", Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770N (16 February 2009); https://doi.org/10.1117/12.821570

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