Modeling and simulation of transistor performance shift under pattern-dependent RTA process

Yun Ye; Frank Liu; Yu Cao

doi:10.1117/12.816683

12 March 2009 Modeling and simulation of transistor performance shift under pattern-dependent RTA process

Yun Ye, Frank Liu, Yu Cao

Proceedings Volume 7275, Design for Manufacturability through Design-Process Integration III; 72751T (2009) https://doi.org/10.1117/12.816683
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Rapid-thermal annealing (RTA) is widely used in scaled CMOS fabrication in order to achieve ultra-shallow junction. However, recent results report systematic threshold voltage (V_th) change and increased device variation due to the RTA process [1][2]. The amount of such changes further depends on layout pattern density. In this work, a suite of thermal/TCAD simulation and compact models to accurately predict the change of transistor parameters is developed. The modeling results are validated with published silicon data, improving design predictability with advanced manufacturing process.

Citation Download Citation

Yun Ye, Frank Liu, and Yu Cao "Modeling and simulation of transistor performance shift under pattern-dependent RTA process", Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72751T (12 March 2009); https://doi.org/10.1117/12.816683

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