Non-chemically amplified negative resist for EUV lithography

Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kanayama; Toshiro Itani

doi:10.1117/12.813377

1 April 2009 Non-chemically amplified negative resist for EUV lithography

Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, Koji Kanayama, Toshiro Itani

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731N (2009) https://doi.org/10.1117/12.813377
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Non-chemically amplified (CA) negative resist for EUV lithography was studied. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl, norbornen, or methacrylate moiety. Dissolution property of the modified-PHS in TMAHaq solution was studied. The degree of the modification of PHS strongly affected the solubility in TMAHaq. Resist was a mixture of modified-PHS, multifunctional thiol compound, and photo-radical generator. Photo-sensitivity of the resist was studied at 254 nm and 13.5 nm. The sensitivity was affected the concentration of thiol compound added. It was found that the present resist system was highly sensitive (5~6 mJ/cm2) to EUV exposure.

Citation Download Citation

Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, Koji Kanayama, and Toshiro Itani "Non-chemically amplified negative resist for EUV lithography", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731N (1 April 2009); https://doi.org/10.1117/12.813377

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