Paper
23 March 2009 Fast analysis and diagnostics for improving overlay control: moving beyond the black box approach
Yi-An Liu, Wei-Ming Wu, Hsiao-Chiang Lin, Jun-Cheng (Nelson) Lai, Chin-Chou (Kevin) Huang, Hsing-Chien (Robert) Wu, Healthy Huang, David Tien
Author Affiliations +
Abstract
Controlling overlay residuals to the lowest possible levels is critical for high yielding mass production success and is one of the most pressing challenges for lithographers. In this paper, the authors will show how the use of certain systematic diagnostic and analysis tools combined with a source of variance methodology can allow users to promptly separate the overlay sources of error into different contributors and quickly make the proper corrections. This methodology with the analysis tools provide a turnkey solution to help process and equipment engineers take fast decisions and act quickly to overcome these overlay challenges, which is one of the key contributing factors to staying ahead.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi-An Liu, Wei-Ming Wu, Hsiao-Chiang Lin, Jun-Cheng (Nelson) Lai, Chin-Chou (Kevin) Huang, Hsing-Chien (Robert) Wu, Healthy Huang, and David Tien "Fast analysis and diagnostics for improving overlay control: moving beyond the black box approach", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72722Z (23 March 2009); https://doi.org/10.1117/12.812478
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KEYWORDS
Overlay metrology

Semiconducting wafers

Scanners

Error analysis

Reticles

Control systems

Diagnostics

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