Growth and luminescence properties of one-dimensional InN and InGaN nanostructures

Li-Chyong Chen; Abhijit Ganguly; Chih-Wei Hsu; Ming-Shien Hu; Szu-Ping Fu; Yang-Fang Chen; Kuei-Hsien Chen

doi:10.1117/12.810438

3 February 2009 Growth and luminescence properties of one-dimensional InN and InGaN nanostructures

Li-Chyong Chen, Abhijit Ganguly, Chih-Wei Hsu, Ming-Shien Hu, Szu-Ping Fu, Yang-Fang Chen, Kuei-Hsien Chen

Proceedings Volume 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII; 723112 (2009) https://doi.org/10.1117/12.810438
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Growth and luminescence properties of InN nanobelts (InNNBs) and InGaN nanowires (NWs) by MOCVD and thermal CVD will be presented, along with their relation and difference to thin film counterparts. While there is a growing acceptance of the low band gap (0.6-0.7 eV) of InN, the optical properties of the actual samples still suffered, presumably due to the difficulty in obtaining high-quality samples and/or controlling their defect and carrier concentrations. However, the free-standing nanobelts can be nearly defect-free, allowing an excellent opportunity for fundamental investigations on unique dimensionality. InNNBs show photoluminescence (PL) in IR with peak width of 14 meV, the sharpest reported to date for InN. Interestingly, with increasing excitation intensity, InNNBs reveal an anomalously large blueshift in PL, compared to thin films; along with a decrease in the phonon frequencies as evident by Raman measurements. Surface band bending, converse piezoelectric effect, and photoelastic effects are employed to explain these behaviors. As for InGaN NWs, both In-rich and Ga-rich ternary nanowires have been synthesized by simply varying growth temperature. Morphological and structural characterizations reveal a phase-separated microstructure wherein the isovalent heteroatoms are self-aggregated, forming self assembled quantum dots (SAQDs) embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In-rich and Ga-rich nanowires, which has been explained by proposing a multi-level band schema.

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Li-Chyong Chen, Abhijit Ganguly, Chih-Wei Hsu, Ming-Shien Hu, Szu-Ping Fu, Yang-Fang Chen, and Kuei-Hsien Chen "Growth and luminescence properties of one-dimensional InN and InGaN nanostructures", Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 723112 (3 February 2009); https://doi.org/10.1117/12.810438

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KEYWORDS

Indium nitride

Indium gallium nitride

Phonons

Luminescence

Gallium nitride

Photoelasticity

Raman spectroscopy

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