Ultraviolet laser diodes on sapphire and AlN substrates

Michael Kneissl; Zhihong Yang; Mark Teepe; Noble M. Johnson

doi:10.1117/12.810926

3 February 2009 Ultraviolet laser diodes on sapphire and AlN substrates

Michael Kneissl, Zhihong Yang, Mark Teepe, Noble M. Johnson

Proceedings Volume 7230, Novel In-Plane Semiconductor Lasers VIII; 72300E (2009) https://doi.org/10.1117/12.810926
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The performance characteristics of InAlGaN multiple quantum well (MQW) lasers grown on sapphire and low defect density bulk AlN substrates has been compared. The group III-nitride laser heterostructures were grown on (0001) AlN and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Lasing was observed for optically pumped AlGaInN heterostructures in the wavelength range between 333 nm and 310 nm. A comparison of laser thresholds shows reduced threshold power densities for lasers grown on bulk AlN with threshold densities as low as 175 kW/cm² for lasers emitting near 330 nm.

Citation Download Citation

Michael Kneissl, Zhihong Yang, Mark Teepe, and Noble M. Johnson "Ultraviolet laser diodes on sapphire and AlN substrates", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300E (3 February 2009); https://doi.org/10.1117/12.810926

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