Metamorphic InGaAs telecom lasers on GaAs

I. Tångring; Y. X. Song; D. H. Wu; Z. C. Niu; S. M. Wang; A. Larsson

doi:10.1117/12.808787

3 February 2009 Metamorphic InGaAs telecom lasers on GaAs

I. Tångring, Y. X. Song, D. H. Wu, Z. C. Niu, S. M. Wang, A. Larsson

Proceedings Volume 7230, Novel In-Plane Semiconductor Lasers VIII; 723003 (2009) https://doi.org/10.1117/12.808787
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

Citation Download Citation

I. Tångring, Y. X. Song, D. H. Wu, Z. C. Niu, S. M. Wang, and A. Larsson "Metamorphic InGaAs telecom lasers on GaAs", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 723003 (3 February 2009); https://doi.org/10.1117/12.808787

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available