Paper
6 February 2009 120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth
Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, Phillip Moser, Dejan Arsenijevic, Vitaly A. Shchukin, Nikolai N. Ledentsov, Sergey S. S. Mikhrin, Igor L. Krestnikov, Daniel A. Livshits, Alexey R. Kovsh, Matthias Kuntz, Dieter Bimberg
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Abstract
980 nm VCSELs based on sub-monolayer growth show for 20 Gbit/s large signal modulation clearly open eyes without adjustment of the driving conditions between 25 and 120 °C. To access the limiting mechanism for the modulation bandwidth, a temperature dependent small signal analysis is carried out on these devices. Single mode devices are limited by damping, whereas multimode devices are limited by thermal effects, preventing higher photon densities in the cavity.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, Phillip Moser, Dejan Arsenijevic, Vitaly A. Shchukin, Nikolai N. Ledentsov, Sergey S. S. Mikhrin, Igor L. Krestnikov, Daniel A. Livshits, Alexey R. Kovsh, Matthias Kuntz, and Dieter Bimberg "120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 72290C (6 February 2009); https://doi.org/10.1117/12.813064
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KEYWORDS
Modulation

Vertical cavity surface emitting lasers

Temperature metrology

Indium gallium arsenide

Resistance

Semiconductor lasers

Detection theory

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