Long-wavelength Ge/GaAs Heterostructure Avalanche Photodiodes For Monolithic Integration

J. J. Rosato; F. C. Jain

doi:10.1117/12.937670

14 January 1987 Long-wavelength Ge/GaAs Heterostructure Avalanche Photodiodes For Monolithic Integration

J. J. Rosato, F. C. Jain

Proceedings Volume 0722, Components for Fiber Optic Applications; (1987) https://doi.org/10.1117/12.937670
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

A novel photodetector for long-wavelength fiber optical communication systems is presented and analyzed. The Ge/GaAs Heterostructure Avalanche Photodiode (HAPD) consists of a thin epitaxial p+-n-n+ or p+-n-v-n+ Ge structure grown on either semi-insulating or n-GaAs substrates. The use of a Ge/GaAs heterostructure improves the performance of the HAPD relative to conventional Ge avalanche photodiodes. The ease of fabrication and projected low cost make this photodiode particularly attractive for monolithic integration. Several methods for integrating the HAPD with other electronic and optoelectronic devices are described.

Citation Download Citation

J. J. Rosato and F. C. Jain "Long-wavelength Ge/GaAs Heterostructure Avalanche Photodiodes For Monolithic Integration", Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); https://doi.org/10.1117/12.937670

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