Zinc oxide and related compounds: order within the disorder

R. Martins; Luisa Pereira; P. Barquinha; I. Ferreira; R. Prabakaran; G. Goncalves; A. Goncalves; E. Fortunato

doi:10.1117/12.816577

12 February 2009 Zinc oxide and related compounds: order within the disorder

R. Martins, Luisa Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Goncalves, A. Goncalves, E. Fortunato

Proceedings Volume 7217, Zinc Oxide Materials and Devices IV; 72170B (2009) https://doi.org/10.1117/12.816577
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

This paper discusses the effect of order and disorder on the electrical and optical performance of ionic oxide semiconductors based on zinc oxide. These materials are used as active thin films in electronic devices such as pn heterojunction solar cells and thin-film transistors. Considering the expected conduction mechanism in ordered and disordered semiconductors the role of the spherical symmetry of the s electron conduction bands will be analyzed and compared to covalent semiconductors. The obtained results show p-type c-Si/a-IZO/poly-ZGO solar cells exhibiting efficiencies above 14%, in device areas of about 2.34 cm². Amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance than the polycrystalline TFTs based on ZnO, translated by ION/IOFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm²/Vs. Apart from that, preliminary data on p-type oxide TFT based on the Zn-Cu-O system will also be presented.

Citation Download Citation

R. Martins, Luisa Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Goncalves, A. Goncalves, and E. Fortunato "Zinc oxide and related compounds: order within the disorder", Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170B (12 February 2009); https://doi.org/10.1117/12.816577

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