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The Pt/Ga2O3/GaN diodes were fabricated in which the Ga2O3 oxide layers were directly grown on GaN layer using a photoelectrochemical method. Then, the Ga2O3 oxide films were annealed in O2 ambiance at 700 °C for 2 hours to perform the β-Ga2O3 crystalline phases. The hydrogen sensing characteristics of Pt/GaN (metal-semiconductor, MS) and Pt/β-Ga2O3/GaN (metal-insulator-semiconductor, MIS) diodes under hydrogen-containing ambiance were studied in an air atmosphere. Compared with the MS devices, the MIS devices exhibited better hydrogen sensing ability. The result demonstrates that the β-Ga2O3 layer plays an important role in the hydrogen sensing of the GaN based MIS diodes.
Jheng-Tai Yan,Chun-Yen Tseng,Chia-Hsun Chen, andChing-Ting Lee
"Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721612 (18 February 2009); https://doi.org/10.1117/12.811004
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Jheng-Tai Yan, Chun-Yen Tseng, Chia-Hsun Chen, Ching-Ting Lee, "Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode," Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721612 (18 February 2009); https://doi.org/10.1117/12.811004