1.3-um InAs quantum dot vertical cavity surface emitting lasers with planar electrode configuration

Y. Ding; W. J. Fan; D. W. Xu; C. Z. Tong; W. K. Loke; S. F. Yoon; D. H. Zhang; Y. Liu; N. H. Zhu; L. J. Zhao; W. Wang

doi:10.1117/12.810970

9 February 2009 1.3-μm InAs quantum dot vertical cavity surface emitting lasers with planar electrode configuration

Y. Ding, W. J. Fan, D. W. Xu, C. Z. Tong, W. K. Loke, S. F. Yoon, D. H. Zhang, Y. Liu, N. H. Zhu, L. J. Zhao, W. Wang

Proceedings Volume 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration; 715807 (2009) https://doi.org/10.1117/12.810970
Event: International Conference of Optical Instrument and Technology, 2008, Beijing, China

Abstract

We present the 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar electrodes configuration. The lasing wavelength is around 1274 nm. The lowest threshold current of wafer level device is ~1 mA, which corresponds to a low threshold current density of ~1.3 kA/cm² or 76 A/cm² per QD layer. The maximum output power of 1 mW can be obtained at room temperature. High temperature stability can be seen in temperature dependence L-I characteristics of InAs QD VCSEL 3-dB modulation frequency response of 1.7 GHz can be obtained in the small signal response measurements.

Citation Download Citation

Y. Ding, W. J. Fan, D. W. Xu, C. Z. Tong, W. K. Loke, S. F. Yoon, D. H. Zhang, Y. Liu, N. H. Zhu, L. J. Zhao, and W. Wang "1.3-μm InAs quantum dot vertical cavity surface emitting lasers with planar electrode configuration", Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 715807 (9 February 2009); https://doi.org/10.1117/12.810970

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