Paper
18 November 2008 Temperature characteristics of several familiar diode lasers with broad area
Author Affiliations +
Proceedings Volume 7135, Optoelectronic Materials and Devices III; 713543 (2008) https://doi.org/10.1117/12.803712
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
Temperature characteristics of several familiar high power diode lasers with broad area, whose wavelength was separately 808 nm, 810 nm, 940 nm and 980 nm, were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures, different structures were attempted. For the 808 nm structure, we tried different barrier thicknesses. For the 810 nm structure, different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper, the widths of these devices were all 100 μm. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuemei Liang, Li Qin, Chunfeng He, Qiang Ma, Yongqiang Ning, and Lijun Wang "Temperature characteristics of several familiar diode lasers with broad area", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713543 (18 November 2008); https://doi.org/10.1117/12.803712
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KEYWORDS
Semiconductor lasers

Quantum wells

Lab on a chip

Waveguides

Broad area laser diodes

Cladding

Laser damage threshold

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