Optical properties of protocrystalline silicon/amorphous SiC multilayer films

Guangsheng Fu; Luo Ma; Wanbing Lu; Zicai Zhang; Wei Yu

doi:10.1117/12.803517

18 November 2008 Optical properties of protocrystalline silicon/amorphous SiC multilayer films

Guangsheng Fu, Luo Ma, Wanbing Lu, Zicai Zhang, Wei Yu

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 713540 (2008) https://doi.org/10.1117/12.803517
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

Protocrystalline silicon/amorphous SiC multilayer films were fabricated by helicon wave plasma enhanced chemical vapour deposition (HW-PECVD). Atom force microscopy, Raman scattering and optical absorption measurements were used to analyze the microstructure and optical properties of the multilayer films. Experiment analyses reveal that through inserting transient a-SiC layer into film depositing process, well-controlled pc-Si:H films have been obtained in the growth condition of the μc-Si:H. The optical gap is observed being tuned from 2.15 to 2.43 eV by varying single pc-Si:H layer thickness. Such multilayer structure should have potential application in constructing high efficiency and stable Si-based solar cells.

Citation Download Citation

Guangsheng Fu, Luo Ma, Wanbing Lu, Zicai Zhang, and Wei Yu "Optical properties of protocrystalline silicon/amorphous SiC multilayer films", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713540 (18 November 2008); https://doi.org/10.1117/12.803517

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