Tailoring of quantum dot basic cell towards high-detectivity THz-IR photodetector

A. Rostami; H. Rasooli Saghai; H. Baghban Asghari Nejad; N. Sadoogi

doi:10.1117/12.800779

18 November 2008 Tailoring of quantum dot basic cell towards high-detectivity THz-IR photodetector

A. Rostami, H. Rasooli Saghai, H. Baghban Asghari Nejad, N. Sadoogi

Author Affiliations +

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71352Z (2008) https://doi.org/10.1117/12.800779
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

In this paper, a high detectivity THZ-IR photodetector based on resonant tunneling spherical centered defect quantum dot (RT-SCDQD) is investigated. Inserting the centered defect in quantum dot, increases the dipole transition matrix element and so increases the absorption coefficient considerably (1.05x10⁶~7.33x10⁶ m^-1 at 83μm). Therefore the quantum efficiency in SCDQD structure enhances which leads to increasing the responsivity of the proposed system. We propose a method for implementation of this complex quantum dot. Attaching the resonant tunneling double barrier to the quantum dot removes the basic problem of electron collection from deep excited state without applying large bias voltages. Also, application of the double barrier reduces the dark current. These improvements conclude to ultra high detectivity of 2.25x10⁹ cmHz^1/2/W at 300°K and 83μm respectively.

Citation Download Citation

A. Rostami, H. Rasooli Saghai, H. Baghban Asghari Nejad, and N. Sadoogi "Tailoring of quantum dot basic cell towards high-detectivity THz-IR photodetector", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71352Z (18 November 2008); https://doi.org/10.1117/12.800779

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