Paper
16 October 2008 RF power amplifier design for high-efficiency applications
Peter Wright, Chris Roff, T. Williams, J. Lees, J. Benedikt, P. J. Tasker
Author Affiliations +
Proceedings Volume 7112, Unmanned/Unattended Sensors and Sensor Networks V; 71120T (2008) https://doi.org/10.1117/12.801890
Event: SPIE Security + Defence, 2008, Cardiff, Wales, United Kingdom
Abstract
In this paper a time domain waveform measurement system with active harmonic load-pull has been used to enhance the design cycle of RF power amplifiers (PAs). Wave-shaping (waveform engineering) techniques using Cardiff University's high power waveform measurement system have yielded optimum device conditions enabling a rapid PA realisation with a first-pass success. The resulting inverse class-F design, based on a 10W GaN HEMT device, is operating at 0.9GHz, and achieving 81.5% drain efficiency in both the load-pull emulated state and also in the directly realised PA. The value of measured waveforms, and the ability to engineer optimum waveforms to a specific amplifier mode, is demonstrated in this study.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Wright, Chris Roff, T. Williams, J. Lees, J. Benedikt, and P. J. Tasker "RF power amplifier design for high-efficiency applications", Proc. SPIE 7112, Unmanned/Unattended Sensors and Sensor Networks V, 71120T (16 October 2008); https://doi.org/10.1117/12.801890
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KEYWORDS
Computer aided design

Amplifiers

Gallium nitride

Field effect transistors

Protactinium

Time metrology

Transistors

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