Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg1-xCdxTe superlattices and FIR detector applications

C. R. Becker; K. Ortner; V. Latussek; C. H. Grein; S. Sivananthan

doi:10.1117/12.796188

3 September 2008 Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg_1-xCd_xTe superlattices and FIR detector applications

C. R. Becker, K. Ortner, V. Latussek, C. H. Grein, S. Sivananthan

Author Affiliations +

Proceedings Volume 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI; 70820C (2008) https://doi.org/10.1117/12.796188
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

Detectors in the far infrared based on HgTe/Hg_1-xCd_xTe superlattices (SL's) are superior to those based on Hg_1-xCd_xTe alloys. This is based on their band structure, however, it was concluded in an investigation of the hydrostatic pressure dependence of photoluminescence (PL) peaks investigation reported in Phys. Rev. B 48, 4460 (1993) that either the band structure model was incorrect or the observed PL peaks were related to impurities. In contrast, in optical absorption experiments, the hydrostatic pressure dependence of intersubband transitions agrees with theory, which corroborates the validity of the band structure model. The first advantage is the required precision of the growth parameters for the desired band gap or cut off wavelength (λ_co). More important is the possibility to significantly reduce leak currents by the appropriate choice of barrier thickness. Furthermore the absorption edge is much steeper and therefore the SL can be much thinner. Due to Auger suppression in these type III SL's, carrier lifetimes are significantly enhanced. Finally the SL is significantly less susceptible to a Burstein-Moss shift of the adsorption edge; at least an order of magnitude greater electron concentration is necessary in order to produce the same Burstein-Moss shift. A method for <i>in situ p</i> type doped quantum wells (QW's) and SL's with nitrogen and arsenic by means of molecular beam epitaxy (MBE) is discussed.

Citation Download Citation

C. R. Becker, K. Ortner, V. Latussek, C. H. Grein, and S. Sivananthan "Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg_1-xCd_xTe superlattices and FIR detector applications", Proc. SPIE 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI, 70820C (3 September 2008); https://doi.org/10.1117/12.796188

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Stereolithography

Sensors

Superlattices

Absorption

Cadmium

Far infrared

Infrared sensors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years