Distributed processing (DP) based e-beam lithography simulation with long range correction algorithm in e-beam machine

Won-Tai Ki; Ji-Hyeon Choi; Byung-Gook Kim; Sang-Gyun Woo; Han-Ku Cho

doi:10.1117/12.793022

19 May 2008 Distributed processing (DP) based e-beam lithography simulation with long range correction algorithm in e-beam machine

Won-Tai Ki, Ji-Hyeon Choi, Byung-Gook Kim, Sang-Gyun Woo, Han-Ku Cho

Author Affiliations +

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280E (2008) https://doi.org/10.1117/12.793022
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

As the design rule with wafer process is getting smaller down below 50nm node, the specification of CDs on a mask is getting more tightened. Therefore, more tight and accurate E-Beam Lithography simulation is highly required in these days. However, in reality most of E-Beam simulation cases, there is a trade-off relationship between the accuracy and the simulation speed. Moreover, the necessity of full chip based simulation has been increasing in order to estimate more accurate mask CDs based on real process condition. Therefore, without consideration of long range correction algorithm such as fogging effect and loading effect correction in E-beam machine, it would be impossible and meaningless to pursue the full chip based simulation. In this paper, we introduce a breakthrough method to overcome the obstacles of E-Beam simulation. In-house E-beam simulator, ELIS (E-beam LIthography Simulator), has been upgraded to solve these problems. First, DP (Distributed Processing) strategy was applied to improve calculation speed. Secondly, the long range correction algorithm of E-beam machine was also applied to compute intensity of exposure on a full chip based (Mask). Finally, ELIS-DP has been evaluated possibility of expecting or analyzing CDs on full chip base.

Citation Download Citation

Won-Tai Ki, Ji-Hyeon Choi, Byung-Gook Kim, Sang-Gyun Woo, and Han-Ku Cho "Distributed processing (DP) based e-beam lithography simulation with long range correction algorithm in e-beam machine", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280E (19 May 2008); https://doi.org/10.1117/12.793022

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Forward error correction

Monte Carlo methods

Computer simulations

Photomasks

Convolution

Electron beam lithography

Cadmium sulfide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years