Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes

Dmitry Pozdnyakov; Andrei Borzdov; Vladimir Borzdov; Fadei Komarov

doi:10.1117/12.802540

29 April 2008 Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes

Dmitry Pozdnyakov, Andrei Borzdov, Vladimir Borzdov, Fadei Komarov

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251S (2008) https://doi.org/10.1117/12.802540
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

The results of calculation of electron drift velocity in GaAs-in-Al₂O₃ and GaAs-in-AlAs quantum nanowires as well as the electric current in the armchair single-wall carbon nanotubes versus time are presented at various electric fields applied along the structures and different temperature.

Citation Download Citation

Dmitry Pozdnyakov, Andrei Borzdov, Vladimir Borzdov, and Fadei Komarov "Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251S (29 April 2008); https://doi.org/10.1117/12.802540

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