Features of evolution of implanted profiles during RTA in non-isothermal reactor

Valery I. Rudakov; Alexander A. Victorov; Yuri I. Denisenko; Boris V. Mochalov; Vladimir V. Ovcharov

doi:10.1117/12.802484

29 April 2008 Features of evolution of implanted profiles during RTA in non-isothermal reactor

Valery I. Rudakov, Alexander A. Victorov, Yuri I. Denisenko, Boris V. Mochalov, Vladimir V. Ovcharov

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702519 (2008) https://doi.org/10.1117/12.802484
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

The process of rapid annealing of implanted silicon wafers under non-isothermal conditions has been studied. It was established, applied temperature gradient ∇T gives rise to relative shift of non-isothermal concentration profiles, corresponding two opposite signs of this gradient. The value of the shift increases with increasing the value of ∇T and nonlinearly depends on the time durations of annealing process. It was established too, the dopant diffusion coefficient increases with increasing the ∇T in the vertical direction in the wafer regardless of ∇T sign. The estimation of thermodiffusion parameters was made. The coefficient of mass transfer of intrinsic non-equilibrium defects was introduced into the phenomenological equations of irreversible thermodynamics to explain anomalous high values of heat of transport. This coefficient allows for influence of generation-recombination processes related to intrinsic non-equilibrium defects on the dopant diffusion. The experimentally observed high values of diffusion coefficients and heat of transport are explained using this coefficient.

Citation Download Citation

Valery I. Rudakov, Alexander A. Victorov, Yuri I. Denisenko, Boris V. Mochalov, and Vladimir V. Ovcharov "Features of evolution of implanted profiles during RTA in non-isothermal reactor", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702519 (29 April 2008); https://doi.org/10.1117/12.802484

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