Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry

V. V. Dovganyuk; T. V. Lytvynchuk; V. V. Slobodyan; M. I. Fodchuk

doi:10.1117/12.797224

22 April 2008 Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry

V. V. Dovganyuk, T. V. Lytvynchuk, V. V. Slobodyan, M. I. Fodchuk

Author Affiliations +

Proceedings Volume 7008, Eighth International Conference on Correlation Optics; 70081B (2008) https://doi.org/10.1117/12.797224
Event: Eighth International Conference on Correlation Optics, 2007, Chernivsti, Ukraine

Abstract

Methods of two- and three-crystal X-ray high-resolution diffractometry were used to investigate structural changes in Cz-Si single crystals irradiated with high-energy electrons (E=18 MeV). The results of experimental investigation were interpreted by means of a generalized dynamic theory of X-ray diffraction in real crystals with randomly distributed microdefects of various types and a damaged surface layer. As dominant defects, disc-shaped and spherical clusters - SiO₂ precipitates, as well as dislocation loops were used.

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V. V. Dovganyuk, T. V. Lytvynchuk, V. V. Slobodyan, and M. I. Fodchuk "Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry", Proc. SPIE 7008, Eighth International Conference on Correlation Optics, 70081B (22 April 2008); https://doi.org/10.1117/12.797224

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