Paper
8 May 2008 A self-biased extremely shallow quantum-well SESAM with a low saturation fluence
E. A. Avrutin, B. S. Ryvkin, K. Panajotov
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Abstract
A Semiconductor Saturable Absorber Mirror utilising the electroabsorption effect in a self-biased stack of extremely shallow quantum wells or in a bulk semiconductor is proposed and analysed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favourably with existing all-optical constructions.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. A. Avrutin, B. S. Ryvkin, and K. Panajotov "A self-biased extremely shallow quantum-well SESAM with a low saturation fluence", Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69970U (8 May 2008); https://doi.org/10.1117/12.783282
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KEYWORDS
Absorption

Quantum wells

Reflectivity

Semiconductors

Gallium arsenide

Picosecond phenomena

Radon

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