Paper
11 March 2008 Characterization of (001)-orientated polycrystalline α-HgI2 films grown by hot wall physical vapor deposition
Yaoming Zheng, Weimin Shi, Guangpu Wei, Juan Qin, Sheng Chen, Linjun Wang, Yiben Xia
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842X (2008) https://doi.org/10.1117/12.792375
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
The highly (001)-orientated α-HgI2 film was deposited by hot wall physical vapor deposition (HWPVD) technology. The scanning electron microscopy (SEM), X-ray diffraction (XRD), dark current versus applied voltage and capacitance-frequency characteristics analysis showed that the film was compactly formed by separated columnar monocrystallines with uniform orientation along c-direction and with high resistivity (2.5×1012Ω•cm) and low dark current.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yaoming Zheng, Weimin Shi, Guangpu Wei, Juan Qin, Sheng Chen, Linjun Wang, and Yiben Xia "Characterization of (001)-orientated polycrystalline α-HgI2 films grown by hot wall physical vapor deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842X (11 March 2008); https://doi.org/10.1117/12.792375
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Cited by 2 scholarly publications.
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KEYWORDS
Physical vapor deposition

Scanning electron microscopy

Quartz

X-ray diffraction

Capacitance

Crystals

Dielectrics

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