Paper
11 April 2008 45nm node logic device OPE matching between exposure tools through laser bandwidth tuning
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Abstract
For 45 nm Node logic devices, we have investigated the impact of laser bandwidth fluctuation on Optical Proximity Effect (OPE) by evaluating variation in through-pitch critical dimension (CD) performance. In addition, from these results we have calculated the Iso-Dense Bias (IDB), and determined the sensitivity to laser bandwidth fluctuation. These IDB results also enable us to present the laser bandwidth stability that is required to maintain a constant OPE. And finally, we introduce results from an investigation into OPE-matching between different generations of exposure tools, whereby in addition to laser bandwidth control, tilt-scan methodology was employed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuyuki Yoshimochi, Takao Tamura, Seiji Nagahara, Takayuki Uchiyama, Nigel Farrar, Toshihiro Oga, and James Bonafede "45nm node logic device OPE matching between exposure tools through laser bandwidth tuning", Proc. SPIE 6924, Optical Microlithography XXI, 69242K (11 April 2008); https://doi.org/10.1117/12.771628
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Cited by 5 scholarly publications.
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KEYWORDS
Critical dimension metrology

Laser stabilization

Optical simulations

Nanoimprint lithography

Logic devices

Beam controllers

Chromatic aberrations

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