Paper
24 March 2008 Angle resolved optical metrology
Author Affiliations +
Abstract
There has been a substantial increase in the research and development of optical metrology techniques as applied to linewidth and overlay metrology for semiconductor manufacturing. Much of this activity has been in advancing scatterometry applications for metrology. In recent years we have been developing a related technique known as scatterfield optical microscopy, which combines elements of scatterometry and bright field imaging. In this paper we present the application of this technique to optical system alignment, calibration, and characterization for the purpose of accurate normalization of optical data, which can be compared with optical simulations involving only absolute measurement parameters. We show a series of experimental data from lines prepared using a focus exposure matrix on silicon and make comparisons between the experimental and theoretical results. The data show agreement on the nanometer scale using parametric simulation libraries and no "tunable" parameters.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. M. Silver, B. M. Barnes, A. Heckert, R. Attota, R. Dixson, and J. Jun "Angle resolved optical metrology", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221M (24 March 2008); https://doi.org/10.1117/12.777131
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Cited by 21 scholarly publications.
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KEYWORDS
Silicon

Atomic force microscopy

Polarization

Critical dimension metrology

Reflectivity

Data modeling

Dielectric mirrors

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