Paper
28 January 2008 Engineering of planar photonic crystal waveguides on silicon-on-insulator for larger guiding bandwidth
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Abstract
Photonic crystal waveguides (PCW) on silicon-on-insulator (SOI) are considered as a promising guiding platform with flexible guiding properties for dense photonics integration. Although SOI is a versatile material for photonics integration, PCWs fabricated on SOI substrates suffer from small guiding bandwidth due to the coupling to leaky TM-like modes. The purpose of this work is to present a systematic approach to increase the low-loss guiding bandwidth of PCWs on SOI. This has been achieved by reducing the interaction of low-group-velocity modes with the surrounding photonic crystal. By this method the low-loss bandwidth of a W1 PCW is increased from 2.5 nm to 12 nm which is the highest reported for this type of waveguide. We also present a detailed analysis of transmission properties of W1 PCWs and elaborate on the coupling to TM-like guided modes present in the low-loss transmission bandwidth of this device.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amir H. Atabaki, Ehsan Shah Hosseini, Babak Momeni, and Ali Adibi "Engineering of planar photonic crystal waveguides on silicon-on-insulator for larger guiding bandwidth", Proc. SPIE 6901, Photonic Crystal Materials and Devices VII, 690117 (28 January 2008); https://doi.org/10.1117/12.778575
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KEYWORDS
Dispersion

Waveguides

Photonic crystals

Silicon

Silica

Polarization

Data acquisition

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