Millimeter-wave GaN HFET technology

Masataka Higashiwaki; Takashi Mimura; Toshiaki Matsui

doi:10.1117/12.767574

15 February 2008 Millimeter-wave GaN HFET technology

Masataka Higashiwaki, Takashi Mimura, Toshiaki Matsui

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68941L (2008) https://doi.org/10.1117/12.767574
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

This paper describes device process and characteristics of sub-100-nm-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) for millimeter-wave applications. We developed three techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-AL-composition and thing AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al_0.4Ga_0.6N(6 nm)/GaN HFETs with a gate length of 60 nm on a 4H-SiC substrate showed a maximum drain current density of 1.6 A/mm and a maximum transconductance of 424 mS/mm. THe use of the techniques led to record current-gain cutoff frequency (f_T) and maximum oscillation frequency (f_max) of 190 and 241 GH, respectively. The f_T and f_maxkept high values over the wide range of drain voltage and current. These results indicate significantly high potential of GaN HFETs for high-power applications in the millimeter-wave frequency range.

Citation Download Citation

Masataka Higashiwaki, Takashi Mimura, and Toshiaki Matsui "Millimeter-wave GaN HFET technology", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941L (15 February 2008); https://doi.org/10.1117/12.767574

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