AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

Ying-Hung Chou; Jheng-Tai Yan; Hsin-Ying Lee; Ching-Ting Lee

doi:10.1117/12.765633

15 February 2008 AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

Ying-Hung Chou, Jheng-Tai Yan, Hsin-Ying Lee, Ching-Ting Lee

Author Affiliations +

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68941C (2008) https://doi.org/10.1117/12.765633
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The co-sputtering Al-doped ZnO (AZO) films with Al nano-particles were used to increase the extraction efficiency of GaN-based light-emitting diodes (LEDs). Fixing the ZnO radio frequency (RF) power of 100W and changing the Al DC power from 0 to 13W, the AZO films with various Al contents can be obtained. In the experimental results, the AZO films deposited with Al DC power of 0, 4.5 and 7W do not have Al segregation. However, the segregated Al nano-particles can be found in the AZO films deposited by Al DC power of 10W and 13W. The co-sputtering 170 nm-thick AZO films with and without Al nano-particles were deposited on the transparent area of LEDs and compared the light output intensity of conventional LEDs. The light intensity of LEDs with AZO films with Al DC power 0, 4.5 and 7W increased 10% than that of conventional LEDs. This was due to the AZO film played a role of anti-reflection coating (ARC) layer. The light intensity of LEDs with AZO film deposited using Al DC power of 10W and 13W increased about 35% and 30%, respectively. It can be deduced that the output light is scattered by the Al nano-particles existed in the AZO film.

Citation Download Citation

Ying-Hung Chou, Jheng-Tai Yan, Hsin-Ying Lee, and Ching-Ting Lee "AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941C (15 February 2008); https://doi.org/10.1117/12.765633

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