Paper
6 November 1986 Indium Arsenide Photovoltaic Detectors, Advances in Fabrication and Performance
Mark E. Greiner, Charles J. Martin
Author Affiliations +
Abstract
Recent advances in detector fabrication techniques at Cincinnati Electronics Corporation have made possible high quality Indium Arsenide (InAs) photovoltaic detectors. InAs detectors are an alternative to Indium Antimonide (InSb) detectors when the wavelength of interest is less than 3.5 microns. InAs photovoltaic (PV) detectors offer the flexibility of thermo-electric cooling available with photoconductive detectors such as lead sulfide without sacrificing speed. Recent advances in detector fabrication techniques have made off-mesa bonding possible. These advances will be discussed below as well as their effect on detector performance. Responsivity and noise data at various operating temperatures will be presented as well.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark E. Greiner and Charles J. Martin "Indium Arsenide Photovoltaic Detectors, Advances in Fabrication and Performance", Proc. SPIE 0686, Infrared Detectors, Sensors, and Focal Plane Arrays, (6 November 1986); https://doi.org/10.1117/12.936523
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Indium arsenide

Resistance

Infrared sensors

Photovoltaic detectors

Infrared detectors

Sensor performance

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